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IPG20N06S415ATMA2
Descrizione:
IPG20N06S415ATMA2 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from IR (Infineon Technologies) stock available at Rozee
Categoria:
Semiconduttore discreto
Specifiche
Part Number:
IPG20N06S415ATMA2
Manufacturer:
IR (Infineon Technologies)
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
IPG20N06S415ATMA2 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.64
Remark:
Manufacturer: IR (Infineon Technologies).
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Height:
1 mm
Fall Time:
9 ns
Rise Time:
2 ns
Number of Pins:
8
Input Capacitance:
1.74 nF
Turn-On Delay Time:
12 ns
Turn-Off Delay Time:
17 ns
Max Power Dissipation:
50 W
Max Operating Temperature:
175 °C
Drain to Source Resistance:
15.5 mΩ
Continuous Drain Current (ID):
20 A
Drain to Source Breakdown Voltage:
60 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
3566 In Stock
Applications:
Advanced driver assistance systems (ADAS)
Connected peripherals & printers
Enterprise projectors
Width:
6.15 mm
Length:
5.15 mm
Packaging:
Tape & Reel
Rds On Max:
15.5 mΩ
Package Quantity:
5000
Power Dissipation:
50 W
On-State Resistance:
15.5 mΩ
Element Configuration:
Dual
Max Dual Supply Voltage:
60 V
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Drain to Source Voltage (Vdss):
60 V
Numero di modello:
IPG20N06S415ATMA2
Introduzione
IPG20N06S415ATMA2 Overview\\\\nIPG20N06S415ATMA2 is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have IPG20N06S415ATMA2 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and
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