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2SA1962-O(Q)

Descrizione:
2SA1962-O(Q) datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Electronic Devices and Storage Corporation stock available at Rozee
Categoria:
Semiconduttore discreto
Specifiche
Part Number:
2SA1962-O(Q)
Manufacturer:
Toshiba Electronic Devices and Storage Corporation
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
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More Information:
2SA1962-O(Q) More Information
ECAD:
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Pricing(USD):
$0.00
Remark:
Manufacturer: Toshiba Electronic Devices and Storage Corporation. Rozee is one of the Distributors. Wide range of applications.
Mount:
Through Hole
Polarity:
PNP
Packaging:
Bulk
Number of Pins:
3
Number of Elements:
1
Transition Frequency:
30 MHz
Max Collector Current:
15 A
Gain Bandwidth Product:
30 MHz
Min Operating Temperature:
-55 °C
Collector Base Voltage (VCBO):
230 V
Collector Emitter Breakdown Voltage:
230 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - Single
Qty:
418 In Stock
Applications:
Infotainment & cluster Motor drives Enterprise projectors
hFE Min:
55
Frequency:
30 MHz
Current Rating:
-15 A
Power Dissipation:
130 W
Voltage Rating (DC):
-230 V
Element Configuration:
Single
Max Power Dissipation:
130 W
Max Operating Temperature:
150 °C
Emitter Base Voltage (VEBO):
5 V
Collector Emitter Voltage (VCEO):
230 V
Collector Emitter Saturation Voltage:
-1.5 V
Numero di modello:
2SA1962-O ((Q)
Introduzione
2SA1962-O(Q) Overview\\n2SA1962-O(Q) is a model belonging to the Transistors - Bipolar (BJT) - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have 2SA1962-O(Q) high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. 2SA1962
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