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2SA1162S-Y,LF
Descrizione:
2SA1162S-Y,LF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Electronic Devices and Storage Corporation stock available at Rozee
Categoria:
Semiconduttore discreto
Specifiche
Part Number:
2SA1162S-Y,LF
Manufacturer:
Toshiba Electronic Devices and Storage Corporation
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa MoneyGram Western Union
More Information:
2SA1162S-Y,LF More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Toshiba Electronic Devices and Storage Corporation.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Polarity:
PNP
Case/Package:
SOT-23-3
Max Breakdown Voltage:
50 V
Max Power Dissipation:
150 mW
Emitter Base Voltage (VEBO):
-5 V
Collector Emitter Breakdown Voltage:
50 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - Single
Qty:
184 In Stock
Applications:
Aerospace & defense
Grid infrastructure
Portable electronics
hFE Min:
70
Packaging:
Cut Tape (CT)
Transition Frequency:
80 MHz
Max Collector Current:
150 mA
Gain Bandwidth Product:
80 MHz
Collector Emitter Voltage (VCEO):
300 mV
Numero di modello:
2SA1162S-Y,LF
Introduzione
2SA1162S-Y,LF Overview\\n2SA1162S-Y,LF is a model belonging to the Transistors - Bipolar (BJT) - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have 2SA1162S-Y,LF high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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