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MRF6S19100NBR1
Descrizione:
MRF6S19100NBR1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Rochester Electronics stock available at Rozee
Categoria:
Semiconduttore discreto
Specifiche
Part Number:
MRF6S19100NBR1
Manufacturer:
Rochester Electronics
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
MRF6S19100NBR1 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$52.49
Remark:
Manufacturer: Rochester Electronics.
Rozee is one of the Distributors.
Wide range of applications.
Gain:
14.5 dB
Frequency:
1.99 GHz
Output Power:
22 W
Test Voltage:
28 V
Number of Pins:
4
Power Dissipation:
287 W
Element Configuration:
Single
Max Operating Temperature:
150 °C
Gate to Source Voltage (Vgs):
12 V
Drain to Source Breakdown Voltage:
68 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - RF
Qty:
2507 In Stock
Applications:
Wearables (non-medical)
Test & measurement
Weight:
1.911098 g
Case/Package:
TO-272-4
Test Current:
950 mA
Current Rating:
900 mA
Voltage Rating:
68 V
Voltage Rating (DC):
28 V
Max Power Dissipation:
287 W
Min Operating Temperature:
-65 °C
Drain to Source Voltage (Vdss):
68 V
Numero di modello:
MRF6S19100NBR1
Introduzione
MRF6S19100NBR1 Overview\\\\nMRF6S19100NBR1 is a model belonging to the Transistors - FETs, MOSFETs - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have MRF6S19100NBR1 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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