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BFU580GX
Descrizione:
BFU580GX datasheet pdf and Transistors - Bipolar (BJT) - RF product details from NXP Semiconductors stock available at Rozee
Categoria:
Semiconduttore discreto
Specifiche
Part Number:
BFU580GX
Manufacturer:
NXP Semiconductors
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa MoneyGram Western Union
More Information:
BFU580GX More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.82
Remark:
Manufacturer: NXP Semiconductors.
Rozee is one of the Distributors.
Wide range of applications.
Gain:
10.5 dB
hFE Min:
60
Frequency:
900 MHz
Schedule B:
8541210080
Contact Plating:
Tin
Element Configuration:
Dual
Max Collector Current:
60 mA
Gain Bandwidth Product:
11 GHz
Min Operating Temperature:
-40 °C
Continuous Collector Current:
30 mA
Collector Emitter Voltage (VCEO):
16 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty:
7091 In Stock
Applications:
Power delivery
PC & notebooks
Advanced driver assistance systems (ADAS)
Mount:
Surface Mount
Polarity:
NPN
Packaging:
Tape & Reel (TR)
Case/Package:
TO-261-4
Transition Frequency:
11 GHz
Max Breakdown Voltage:
12 V
Max Power Dissipation:
1 W
Max Operating Temperature:
150 °C
Emitter Base Voltage (VEBO):
2 V
Collector Base Voltage (VCBO):
24 V
Collector Emitter Breakdown Voltage:
12 V
Numero di modello:
BFU580GX
Introduzione
BFU580GX Overview\\\\nBFU580GX is a model belonging to the Transistors - Bipolar (BJT) - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have BFU580GX high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. BFU580GX is widely
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