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BFU610F,115

Descrizione:
BFU610F,115 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from NXP Semiconductors stock available at Rozee
Categoria:
Semiconduttore discreto
Specifiche
Part Number:
BFU610F,115
Manufacturer:
NXP Semiconductors
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa MoneyGram Western Union
More Information:
BFU610F,115 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.49
Remark:
Manufacturer: NXP Semiconductors. Rozee is one of the Distributors. Wide range of applications.
Gain:
23.5 dB
hFE Min:
90
Packaging:
Digi-Reel®
Output Power:
136 mW
Contact Plating:
Tin
Element Configuration:
Single
Max Collector Current:
10 mA
Max Operating Temperature:
150 °C
Emitter Base Voltage (VEBO):
2.5 V
Collector Base Voltage (VCBO):
16 V
Collector Emitter Breakdown Voltage:
5.5 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty:
2345 In Stock
Applications:
Home theater & entertainment Grid infrastructure
Mount:
Surface Mount
Polarity:
NPN
Schedule B:
8541210080
Number of Pins:
4
Transition Frequency:
15 GHz
Max Breakdown Voltage:
5.5 V
Max Power Dissipation:
136 mW
Min Operating Temperature:
-65 °C
Continuous Collector Current:
10 mA
Collector Emitter Voltage (VCEO):
5.5 V
Numero di modello:
BFU610F,115
Introduzione
BFU610F,115 Overview\\\\nBFU610F,115 is a model belonging to the Transistors - Bipolar (BJT) - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have BFU610F,115 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. BFU610F,115
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