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BFR740L3RHE6327XTSA1
Descrizione:
BFR740L3RHE6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from IR (Infineon Technologies) stock available at Rozee
Categoria:
Semiconduttore discreto
Specifiche
Part Number:
BFR740L3RHE6327XTSA1
Manufacturer:
IR (Infineon Technologies)
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
BFR740L3RHE6327XTSA1 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.95
Remark:
Manufacturer: IR (Infineon Technologies).
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Frequency:
42 GHz
Power Gain:
24.5 dB
Current Rating:
30 mA
Contact Plating:
Gold
Power Dissipation:
160 mW
Voltage Rating (DC):
4 V
Max Power Dissipation:
160 mW
Min Operating Temperature:
-65 °C
Collector Base Voltage (VCBO):
13 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty:
9007 In Stock
Applications:
Portable electronics
Broadband fixed line access
Polarity:
NPN
Packaging:
Cut Tape (CT)
Noise Figure:
0.5 dB
Number of Pins:
3
Package Quantity:
15000
Number of Elements:
1
Max Collector Current:
30 mA
Max Operating Temperature:
150 °C
Emitter Base Voltage (VEBO):
1.2 V
Collector Emitter Voltage (VCEO):
4 V
Numero di modello:
BFR740L3RHE6327XTSA1
Introduzione
BFR740L3RHE6327XTSA1 Overview\\\\nBFR740L3RHE6327XTSA1 is a model belonging to the Transistors - Bipolar (BJT) - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have BFR740L3RHE6327XTSA1 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and
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