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BC858CDW1T1G
Descrizione:
BC858CDW1T1G datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Rochester Electronics stock available at Rozee
Categoria:
Semiconduttore discreto
Specifiche
Part Number:
BC858CDW1T1G
Manufacturer:
Rochester Electronics
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
BC858CDW1T1G More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.02
Remark:
Manufacturer: Rochester Electronics.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Polarity:
PNP
Number of Pins:
6
Transition Frequency:
100 MHz
Max Collector Current:
100 mA
Gain Bandwidth Product:
100 MHz
Min Operating Temperature:
-55 °C
Collector Base Voltage (VCBO):
-30 V
Collector Emitter Breakdown Voltage:
30 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
Qty:
5414 In Stock
Applications:
Portable electronics
Data center & enterprise computing
hFE Min:
420
Current Rating:
-100 mA
Voltage Rating (DC):
-30 V
Element Configuration:
Dual
Max Power Dissipation:
380 mW
Max Operating Temperature:
150 °C
Emitter Base Voltage (VEBO):
5 V
Collector Emitter Voltage (VCEO):
650 mV
Collector Emitter Saturation Voltage:
-650 mV
Numero di modello:
BC858CDW1T1G
Introduzione
BC858CDW1T1G Overview\\\\nBC858CDW1T1G is a model belonging to the Transistors - Bipolar (BJT) - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have BC858CDW1T1G high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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