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HN2A01FU-Y(TE85L,F
Descrizione:
HN2A01FU-Y(TE85L,F datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Toshiba Electronic Devices and Storage Corporation stock available at Rozee
Categoria:
Semiconduttore discreto
Specifiche
Part Number:
HN2A01FU-Y(TE85L,F
Manufacturer:
Toshiba Electronic Devices and Storage Corporation
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa MoneyGram Western Union
More Information:
HN2A01FU-Y(TE85L,F More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.45
Remark:
Manufacturer: Toshiba Electronic Devices and Storage Corporation.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Polarity:
PNP
Case/Package:
SOT-363
Transition Frequency:
80 MHz
Max Breakdown Voltage:
50 V
Max Power Dissipation:
200 mW
Max Operating Temperature:
125 °C
Emitter Base Voltage (VEBO):
5 V
Collector Emitter Voltage (VCEO):
300 mV
Collector Emitter Saturation Voltage:
100 mV
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
Qty:
8799 In Stock
Applications:
Connected peripherals & printers
Data storage
Electronic point of sale (EPOS)
hFE Min:
120
Packaging:
Cut Tape (CT)
Number of Pins:
6
Element Configuration:
Dual
Max Collector Current:
150 mA
Gain Bandwidth Product:
80 MHz
Min Operating Temperature:
-55 °C
Collector Base Voltage (VCBO):
50 V
Collector Emitter Breakdown Voltage:
50 V
Numero di modello:
HN2A01FU-Y(TE85L,F
Introduzione
HN2A01FU-Y(TE85L,F Overview\\\\nHN2A01FU-Y(TE85L,F is a model belonging to the Transistors - Bipolar (BJT) - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have HN2A01FU-Y(TE85L,F high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and
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