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HN1B04FU-GR,LF
Descrizione:
HN1B04FU-GR,LF datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Toshiba Electronic Devices and Storage Corporation stock available at Rozee
Categoria:
Semiconduttore discreto
Specifiche
Part Number:
HN1B04FU-GR,LF
Manufacturer:
Toshiba Electronic Devices and Storage Corporation
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
HN1B04FU-GR,LF More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.06
Remark:
Manufacturer: Toshiba Electronic Devices and Storage Corporation.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Schedule B:
8541210080
Transition Frequency:
150 MHz
Max Collector Current:
150 mA
Max Operating Temperature:
125 °C
Collector Emitter Voltage (VCEO):
250 mV
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
Qty:
997 In Stock
Applications:
Wearables (non-medical)
Broadband fixed line access
Home theater & entertainment
Packaging:
Tape & Reel (TR)
Number of Pins:
6
Max Breakdown Voltage:
50 V
Max Power Dissipation:
200 mW
Min Operating Temperature:
-55 °C
Collector Emitter Breakdown Voltage:
50 V
Numero di modello:
HN1B04FU-GR,LF
Introduzione
HN1B04FU-GR,LF Overview\\\\nHN1B04FU-GR,LF is a model belonging to the Transistors - Bipolar (BJT) - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have HN1B04FU-GR,LF high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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